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Infineon Technologies IRF200P222
MOSFET N-CH 200V 182A TO247AC
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 7.44
- Stock
- 392
Product Details
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 3.8V @ 278µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.28mOhm @ 100A, 10V
- Series
- StrongIRFET™
- Power Dissipation (Max)
- 556W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247AC
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 555nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 25000pF @ 50V
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Part Status
- Active
- Mounting Type
- Through Hole