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Infineon Technologies IRL60B216
MOSFET N-CH 60V 195A
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 3.77
- Stock
- 694
Product Details
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 250V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5860pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 33mOhm @ 35A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 390W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 150nC @ 10V