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Microsemi Corporation APT60M80JVR
MOSFET N-CH 600V 55A SOT-227
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 80mOhm @ 32.5A, 10V
- Series
- POWER MOS V®
- Power Dissipation (Max)
- 833W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 264 MAX™ [L2]
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 590nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 13300pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 65A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id
- 4V @ 5mA