NXP USA Inc. 2N7002PT,115

Product Details

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2Ohm @ 500mA, 10V

Series

TrenchMOS™

Power Dissipation (Max)

830mW (Ta)

FET Type

N-Channel

Supplier Device Package

TO-236AB

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.69nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

475mA (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount