NXP USA Inc. 2N7002T,215

Product Details

Rds On (Max) @ Id, Vgs

16.5mOhm @ 20A, 10V

Series

-

Power Dissipation (Max)

62.5W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK56, Power-SO8

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

33.4nC @ 5V

Vgs (Max)

±15V

Drain to Source Voltage (Vdss)

75V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

45.8A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

SC-100, SOT-669

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)