NXP USA Inc. PH3330L,115

Product Details

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

6.5mOhm @ 14A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

6.25W (Tc)

FET Type

N-Channel

Supplier Device Package

8-SO

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

30.3nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

23.7A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)