Images are for reference only. See Product Specifications for product details
NXP USA Inc. PHB23NQ10LT,118
MOSFET N-CH 100V 23A D2PAK
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 300mA (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5Ohm @ 500mA, 10V
- Series
- -
- Power Dissipation (Max)
- 830mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- TO-236AB (SOT23)
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 60V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 40pF @ 10V