NXP USA Inc. PHT6N06T,135

Product Details

Vgs(th) (Max) @ Id

2.5V @ 1mA

Rds On (Max) @ Id, Vgs

8.2mOhm @ 10A, 10V

Power Dissipation (Max)

62.5W (Tc)

Series

TrenchMOS™

Supplier Device Package

LFPAK56, Power-SO8

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

14nC @ 5V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 10V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

67A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Part Status

Discontinued at Digi-Key

Mounting Type

Surface Mount

Package / Case

SC-100, SOT-669