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NXP USA Inc. PMFPB6545UP,115
MOSFET P-CH 20V 3.5A SOT1118
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 380pF @ 10V
- FET Feature
- Schottky Diode (Isolated)
- Current - Continuous Drain (Id) @ 25°C
- 3.5A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 70mOhm @ 1A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 520mW (Ta), 8.3W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- DFN2020-6
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 6nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V