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NXP USA Inc. PMV60EN,215
MOSFET N-CH 30V 4.7A SOT-23
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 410pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5.9A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 1.5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 37mOhm @ 1.5A, 4.5V
- Series
- TrenchMOS™
- Power Dissipation (Max)
- 280mW (Tj)
- FET Type
- N-Channel
- Supplier Device Package
- TO-236AB (SOT23)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 5.8nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V