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ON Semiconductor FDB2670

MOSFET N-CH 200V 19A TO-263AB

Manufacturer
ON Semiconductor
Datasheet
Price
0
Stock
0

Product Details

Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-65°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
80mOhm @ 8A, 4.5V
Series
-
Power Dissipation (Max)
37.5W (Tc)
FET Type
P-Channel
Supplier Device Package
TO-263AB
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
13nC @ 4.5V
Vgs (Max)
±8V
Drain to Source Voltage (Vdss)
20V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
665pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
16A (Ta)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V