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ON Semiconductor FDB5645
MOSFET N-CH 60V 80A TO-263AB
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -65°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 30mOhm @ 14A, 4.5V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 37W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- TO-263AB
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 28nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1890pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 28A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB