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ON Semiconductor FDP14AN06LA0
MOSFET N-CH 60V 67A TO-220AB
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -65°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 80mOhm @ 8A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 37.5W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- TO-220-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 13nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 665pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 16A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V