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ON Semiconductor FQB1N60TM
MOSFET N-CH 600V 1.2A D2PAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 1A, 5V
- Series
- -
- Power Dissipation (Max)
- 30W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252AA
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 8nC @ 10V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)