Images are for reference only. See Product Specifications for product details
ON Semiconductor FQB6N60TM
MOSFET N-CH 600V 6.2A D2PAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 22A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 80mOhm @ 22A, 10V
- Series
- -
- Power Dissipation (Max)
- 100W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 150nC @ 20V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V