ON Semiconductor FQI9N08TU

Product Details

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1.65A, 5V

Series

-

Power Dissipation (Max)

3.1W (Ta), 33W (Tc)

FET Type

N-Channel

Supplier Device Package

I2PAK (TO-262)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

9nC @ 5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

240pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.3A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)