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ROHM Semiconductor R6009JND3TL1
R6009JND3 IS A POWER MOSFET WITH
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 13nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 500V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 415pF @ 25V
- Part Status
- Discontinued at Digi-Key
- Current - Continuous Drain (Id) @ 25°C
- 7.5A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number
- STD5N
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- MDmesh™
- Rds On (Max) @ Id, Vgs
- 800mOhm @ 2.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 100W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- DPAK