Images are for reference only. See Product Specifications for product details
ROHM Semiconductor RQ6E030ATTCR
MOSFET P-CH 30V 3A TSMT
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 2838
Product Details
- Series
- -
- Power Dissipation (Max)
- 450mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 3-DFN1006 (1.0x0.6)
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 20V
- Vgs (Max)
- ±10V
- Current - Continuous Drain (Id) @ 25°C
- 440mA (Ta)
- Technology
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4V
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 3-UFDFN
- Vgs(th) (Max) @ Id
- 1.2V @ 100µA
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.5Ohm @ 10mA, 4V