STMicroelectronics STP25N60M2-EP

Product Details

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.8mOhm @ 76A, 10V

Series

HEXFET®

Power Dissipation (Max)

3.8W (Ta), 230W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-247AC

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

209nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8250pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

210A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Mounting Type

Through Hole