Taiwan Semiconductor Corporation TSM120N06LCS RLG

Product Details

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1211pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

5V

Mounting Type

Surface Mount

Package / Case

SOT-1210, 8-LFPAK33

Vgs(th) (Max) @ Id

2.1V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

11mOhm @ 15A, 10V

Series

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation (Max)

55W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK33

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

11.3nC @ 5V